amplifiers - chip 1 1 - 130 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC486 v01.0106 general description features functional diagram the HMC486 is a high dynamic range gaas phemt mmic 2 watt power ampli er which operates from 7 to 9 ghz. this ampli er die provides 26 db of gain, +34 dbm of saturated power and 24% pae from a +7.0 v supply voltage. output ip3 is +40 dbm typical. the rf i/os are dc blocked and matched to 50 ohms for ease of integration into multi-chip-modules (mcms). all data is taken with the chip in a 50 ohm test xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). saturated output power: +34 dbm @ 24% pae output ip3: +40 dbm gain: 26 db dc supply: +7.0 v @ 1300 ma 50 ohm matched input/output 2.51 mm x 2.51 mm x 0.1 mm electrical specifications, t a = +25 c, vdd = +7v, idd = 1300 ma* typical applications the HMC486 is ideal for use as a power ampli er for: ? point-to-point radios ? point-to-multi-point radios ? test equipment & sensors ? military end-use ? space parameter min. typ. max. min. typ. max. units frequency range 7 - 8 8 - 9 ghz gain 22 25 23 26 db gain variation over temperature 0.04 0.06 0.04 0.06 db/ c input return loss 11 12 db output return loss 8 6 db output power for 1 db compression (p1db) 30 33 30.5 33.5 dbm saturated output power (psat) 33.5 34 dbm output third order intercept (ip3) 40 38 dbm noise figure 6.5 7 db supply current (idd) 1300 1300 ma * adjust vgg between -2 to 0v to achieve idd= 1300 ma typical. gaas phemt mmic 2 watt power amplifier, 7.0 - 9.0 ghz
amplifiers - chip 1 1 - 131 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -15 -10 -5 0 5 10 15 20 25 30 4567891011 s21 s11 s22 response (db) frequency (ghz) HMC486 v01.0106 gaas phemt mmic 2 watt power amplifier, 7.0 - 9.0 ghz -10 -8 -6 -4 -2 0 6 6.5 7 7.5 8 8.5 9 9.5 10 +25c +85c -55c return loss (db) frequency (ghz) -15 -10 -5 0 6 6.5 7 7.5 8 8.5 9 9.5 10 +25c +85c -55c return loss (db) frequency (ghz) 26 27 28 29 30 31 32 33 34 35 36 6 6.5 7 7.5 8 8.5 9 9.5 10 +25c +85c -55c psat (dbm) frequency (ghz) 26 27 28 29 30 31 32 33 34 35 36 6 6.5 7 7.5 8 8.5 9 9.5 10 +25c +85c -55c p1db (dbm) frequency (ghz) 10 12 14 16 18 20 22 24 26 28 30 32 34 6 6.5 7 7.5 8 8.5 9 9.5 10 +25c +85c -55c gain (db) frequency (ghz)
amplifiers - chip 1 1 - 132 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power compression @ 8 ghz output ip3 vs. temperature noise figure vs. temperature reverse isolation vs. temperature gain, power & oip3 vs. supply voltage @ 8 ghz HMC486 v01.0106 gaas phemt mmic 2 watt power amplifier, 7.0 - 9.0 ghz -70 -60 -50 -40 -30 -20 -10 0 6 6.5 7 7.5 8 8.5 9 9.5 10 +25c +85c -55c isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 11 12 6 6.5 7 7.5 8 8.5 9 9.5 10 +25c +85c -55c noise figure (db) frequency (ghz) 26 28 30 32 34 36 38 40 42 44 46 6 6.5 7 7.5 8 8.5 9 9.5 10 +25c +85c -55c oip3 (dbm) frequency (ghz) 22 24 26 28 30 32 34 36 38 40 42 6.5 7 7.5 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) vdd supply voltage (vdc) 0 4 8 12 16 20 24 28 32 36 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) gain, power & oip3 vs. supply current @ 8 ghz 22 24 26 28 30 32 34 36 38 40 42 700 800 900 1000 1100 1200 1300 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) idd supply current (ma)
amplifiers - chip 1 1 - 133 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings drain bias voltage (vdd) +8 vdc gate bias voltage (vgg) -2.0 to 0 vdc rf input power (rfin)(vdd = +7.0 vdc) +15 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 105 mw/c above 85 c) 9.45 w thermal resistance (channel to die bottom) 9.5 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c esd sensitivity (hbm) class 1a vdd (v) idd (ma) +6.5 1305 +7.0 1300 +7.5 1295 typical supply current vs. vdd note: amplifier will operate over full voltage ranges shown above vgg adjusted to achieve idd = 1300 ma at +7.0v electrostatic sensitive device observe handling precautions HMC486 v01.0106 gaas phemt mmic 2 watt power amplifier, 7.0 - 9.0 ghz power dissipation 7 7.5 8 8.5 9 9.5 10 10.5 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 power dissipation (w) input power (dbm) 8 ghz max pdiss @ +85c
amplifiers - chip 1 1 - 134 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC486 v01.0106 gaas phemt mmic 2 watt power amplifier, 7.0 - 9.0 ghz outline drawing notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond pad is .004 square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. 8. overall die size .002 die packaging information [1] standard alternate gp-1 [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
amplifiers - chip 1 1 - 135 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad descriptions pad number function description interface schematic 1rfin this pad is ac coupled and matched to 50 ohms from 7 - 9 ghz. 2 - 4, 6, 7 vdd 1-5 power supply voltage for the ampli er. external bypass capacitors of 100 pf and 0.1 f are required. 5rfout this pad is ac coupled and matched to 50 ohms from 7 - 9 ghz. 8vgg gate control for ampli er. adjust to achieve idd of 1300 ma. please follow mmic ampli er biasing procedure application note. external bypass capacitors of 100 pf and 0.1 f are required. die bottom gnd die bottom must be connected to rf/dc ground. HMC486 v01.0106 gaas phemt mmic 2 watt power amplifier, 7.0 - 9.0 ghz
amplifiers - chip 1 1 - 136 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC486 v01.0106 gaas phemt mmic 2 watt power amplifier, 7.0 - 9.0 ghz assembly diagram
amplifiers - chip 1 1 - 137 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waf e or gel based esd protec- tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. c and a tool temperature of 265 deg. c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. c. do not expose the chip to a temperature greater than 320 deg. c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 deg. c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab HMC486 v01.0106 gaas phemt mmic 2 watt power amplifier, 7.0 - 9.0 ghz
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